中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
InGaAsP or InGaAs semiconductor laser element in which near-edge portion of active layer is substituted with GaAs optical waveguide layer having greater bandgap than active layer

文献类型:专利

作者FUKUNAGA, TOSHIAKI
发表日期2004-11-09
专利号US6816524
著作权人NICHIA CORPORATION
国家美国
文献子类授权发明
其他题名InGaAsP or InGaAs semiconductor laser element in which near-edge portion of active layer is substituted with GaAs optical waveguide layer having greater bandgap than active layer
英文摘要In a semiconductor laser element, a lower cladding layer of a first conductive type, a GaAs first optical waveguide layer of the first conductive type or an undoped type, an InGaAsP or InGaAs compressive-strain active layer, a GaAs second optical waveguide layer of a second conductive type or an undoped type, and an upper cladding portion are formed on a GaAs substrate of the first conductive type. The active layer is not formed in at least one vicinity of at least one end facet, and the space in the at least one vicinity of the at least one end facet is filled with a third optical waveguide layer of the second conductive type or an undoped type, where the bandgaps of the first, second, and third second optical waveguide layers are greater than the bandgap of the active layer.
公开日期2004-11-09
申请日期2002-09-03
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/46306]  
专题半导体激光器专利数据库
作者单位NICHIA CORPORATION
推荐引用方式
GB/T 7714
FUKUNAGA, TOSHIAKI. InGaAsP or InGaAs semiconductor laser element in which near-edge portion of active layer is substituted with GaAs optical waveguide layer having greater bandgap than active layer. US6816524. 2004-11-09.

入库方式: OAI收割

来源:西安光学精密机械研究所

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