InGaAsP or InGaAs semiconductor laser element in which near-edge portion of active layer is substituted with GaAs optical waveguide layer having greater bandgap than active layer
文献类型：专利
| 作者 | FUKUNAGA, TOSHIAKI |
| 发表日期 | 2004-11-09 |
| 专利号 | US6816524 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | InGaAsP or InGaAs semiconductor laser element in which near-edge portion of active layer is substituted with GaAs optical waveguide layer having greater bandgap than active layer |
| 英文摘要 | In a semiconductor laser element, a lower cladding layer of a first conductive type, a GaAs first optical waveguide layer of the first conductive type or an undoped type, an InGaAsP or InGaAs compressive-strain active layer, a GaAs second optical waveguide layer of a second conductive type or an undoped type, and an upper cladding portion are formed on a GaAs substrate of the first conductive type. The active layer is not formed in at least one vicinity of at least one end facet, and the space in the at least one vicinity of the at least one end facet is filled with a third optical waveguide layer of the second conductive type or an undoped type, where the bandgaps of the first, second, and third second optical waveguide layers are greater than the bandgap of the active layer. |
| 公开日期 | 2004-11-09 |
| 申请日期 | 2002-09-03 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46306]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | FUKUNAGA, TOSHIAKI. InGaAsP or InGaAs semiconductor laser element in which near-edge portion of active layer is substituted with GaAs optical waveguide layer having greater bandgap than active layer. US6816524. 2004-11-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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