Optoelectronic integrated device
文献类型：专利
| 作者 | KOBAYASHI, YASUHIRO; MATSUDA, KENICHI |
| 发表日期 | 1997-10-21 |
| 专利号 | US5679964 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Optoelectronic integrated device |
| 英文摘要 | The optoelectronic integrated device includes a semiconductor substrate, a vertical-cavity surface-emitting semiconductor laser formed on the semiconductor substrate, a phototransistor stacked over the vertical-cavity surface emitting semiconductor laser, for driving the vertical-cavity surface-emitting semiconductor laser, and a semiconductor buffer structure interposed between the vertical-cavity surface-emitting semiconductor laser and the phototransistor. The vertical-cavity surface-emitting semiconductor laser includes: a bottom semiconductor mirror; a top semiconductor mirror; and an active region interposed between the bottom semiconductor mirror and the top semiconductor mirror and having a strained quantum well structure for emitting light having a wavelength of lambda . The phototransistor includes: a collector layer; an emitter layer; and a base layer interposed between the collector layer and the emitter layer and absorbing light having a wavelength of lambda . The semiconductor buffer structure includes: a first surface facing the phototransistor and having a lattice constant substantially lattice-matching with the base layer, and a second surface facing the vertical-cavity surface-emitting semiconductor laser. |
| 公开日期 | 1997-10-21 |
| 申请日期 | 1995-07-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46309]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | KOBAYASHI, YASUHIRO,MATSUDA, KENICHI. Optoelectronic integrated device. US5679964. 1997-10-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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