半導体素子の保護膜形成方法
文献类型：专利
| 作者 | 長谷川 光利 |
| 发表日期 | 1998-10-30 |
| 专利号 | JP2846086B2 |
| 著作权人 | キヤノン株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体素子の保護膜形成方法 |
| 英文摘要 | PURPOSE:To form a protective film on end surfaces with high yield, in the state of a wafer without finely dividing the wafer into a bar state, by forming a film-coated layer on the end surfaces formed by etching process or the end surfaces of a trench, and turning said film into an oxide film by heat treatment. CONSTITUTION:By a selective vapor deposition method, a film-coated layer 30 is formed on an etching surface 28 of a wafer on which a resonance surface 29 of laser is formed. That is, a wafer is put in a chamber for Al vapor growth, dimethyl aluminum hydride gas is introduced together with H2 by using a slow leak valve, and an Al film-coated layer 30 is grown. Further, by heating, in an oxygen atmosphere, the wafer on which the film-coated layer 30 is formed, the Al film-coated layer 30 is oxidized, and a protective film 31 of Al2O3 is obtained. Thereby a protective film can be formed on etching end surfaces, in the state of a wafer as it is. |
| 公开日期 | 1999-01-13 |
| 申请日期 | 1990-09-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46310]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | キヤノン株式会社 |
| 推荐引用方式 GB/T 7714 | 長谷川 光利. 半導体素子の保護膜形成方法. JP2846086B2. 1998-10-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。