Photonic crystal semiconductor device and production method thereof
文献类型：专利
| 作者 | KISE, TOMOFUMI; KIMOTO, TATSUYA; YOKOUCHI, NORIYUKI; BABA, TOSHIHIKO |
| 发表日期 | 2009-04-28 |
| 专利号 | US7525726 |
| 著作权人 | FURUKAWA ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Photonic crystal semiconductor device and production method thereof |
| 英文摘要 | To provide a photonic crystal semiconductor device which enables various kinds of optical devices having a photonic crystal structure which is readily formed using a semiconductor and a semiconductor manufacturing process, and a manufacturing method thereof. The object can be achieved by a photonic crystal structure, including a lower DBR layer 1, a core layer 2, an upper DBR layer 3, and a dielectric multilayer film 6 which are sequentially laminated from an n-InP substrate 11 side, a plurality of holes 9 formed in the direction of a film thickness in the core layer 2 and the upper DBR layer 3, and a line defect portion 10 with none of the plurality of holes formed therein and disposed between the plurality of holes 9, wherein the line defect portion 10 serves as an optical waveguide. |
| 公开日期 | 2009-04-28 |
| 申请日期 | 2006-08-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46315]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | KISE, TOMOFUMI,KIMOTO, TATSUYA,YOKOUCHI, NORIYUKI,et al. Photonic crystal semiconductor device and production method thereof. US7525726. 2009-04-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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