Semiconductor light emitting device and method of manufacturing the same
文献类型：专利
| 作者 | RENNIE, JOHN; HATAKOSHI, GENICHI; ONOMURA, MASAAKI |
| 发表日期 | 2000-05-09 |
| 专利号 | US6060335 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting device and method of manufacturing the same |
| 英文摘要 | According to the present invention, a high-efficiency and high reliability GaN-based semiconductor light emitting device having uniform light emission from the active layer, can be obtained by suppressing the defect density of the interface between the guide layer and cladding layer. When manufacturing the GaN-based semiconductor light emitting device, the growth temperature and pressure are increased, or the carrier gas flow rate and ammonia flow rate necessary for efficiently growing p-GaAlN are increased, in the vicinity of the interface between the upper p-GaN guide layer and p-AlGaN cladding layer in particular, and thus a method and structure, capable of suppressing these high defect densities generated, can be provided. By selecting appropriate conditions, namely whether the increment in the temperature and pressure, and the increment in the flow rates of the carrier gas and ammonia should be carried out during the growth of the cladding layer or after, or they should be carried out at the same time or independently, or by inserting an InAlGaN or InGaN buffering layer for preventing the generation of defects, between the waveguide layer and cladding layer, the defect densities can be very much decreased. |
| 公开日期 | 2000-05-09 |
| 申请日期 | 1998-02-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46319]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | RENNIE, JOHN,HATAKOSHI, GENICHI,ONOMURA, MASAAKI. Semiconductor light emitting device and method of manufacturing the same. US6060335. 2000-05-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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