Compound semiconductor light emitting device and process for producing the same
文献类型：专利
| 作者 | MUNAKATA, TSUTOMU; KASHIMA, YASUMASA |
| 发表日期 | 2003-05-13 |
| 专利号 | US6562649 |
| 著作权人 | NEOPHOTONICS SEMICONDUCTOR GK |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Compound semiconductor light emitting device and process for producing the same |
| 英文摘要 | A compound semiconductor light emitting device that can keep the effect of confining carriers into an active layer and that can improve light emission efficiency. In the device having a first conductive type substrate; and active layer on the first conductive type substrate; a second conductive type sub-layer and a first conductive type sub-layer, in this order from a lower portion to an upper portion of the device, on the first conductive type substrate and at both sides of the active layer; a second conductive type cladding layer on/over the active layer and the first conductive type sub-layer; and a second conductive type contact layer on the second conductive type cladding layer 19. A p-type diffusion barrier layer is further formed between the n-type sub-layer and the p-type cladding layer. |
| 公开日期 | 2003-05-13 |
| 申请日期 | 2002-08-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46326]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEOPHOTONICS SEMICONDUCTOR GK |
| 推荐引用方式 GB/T 7714 | MUNAKATA, TSUTOMU,KASHIMA, YASUMASA. Compound semiconductor light emitting device and process for producing the same. US6562649. 2003-05-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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