II-VI compound semiconductor light emitting device
文献类型：专利
| 作者 | NANIWAE, KOICHI; IWATA, HIROSHI |
| 发表日期 | 2001-01-23 |
| 专利号 | US6178190 |
| 著作权人 | NEC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | II-VI compound semiconductor light emitting device |
| 英文摘要 | A semiconductor light emitting device has a stacked structure including an n-type clad layer, an active layer, and a p-type clad layer on an InP substrate. The p-type clad layer is made from an MgZnSeTe-based compound semiconductor lattice-matched with InP. The n-type clad layer is made from a compound semiconductor lattice-matched with InP and selected from an MgZnSeTe-based compound semiconductor, an MgZnCdSe-based compound semiconductor, and an MgCdSSe-based compound semiconductor. |
| 公开日期 | 2001-01-23 |
| 申请日期 | 1998-08-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46327]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | NANIWAE, KOICHI,IWATA, HIROSHI. II-VI compound semiconductor light emitting device. US6178190. 2001-01-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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