VCSEL semiconductor device
文献类型：专利
| 作者 | LI, NEIN-YI; XIE, CHUAN; LEI, CHUN; CARSON, RICHARD F. |
| 发表日期 | 2012-05-29 |
| 专利号 | US8189642 |
| 著作权人 | SUMITOMO ELECTRIC DEVICE INNOVATIONS, U.S.A., INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | VCSEL semiconductor device |
| 英文摘要 | A vertical surface emitting laser having a mesa structure formed with sloping side walls. A passivation layer including at least two sublayers at least partially covers the mesa structure. The at least two sublayers have differing stress components arranged to at least partially counter each other. By making the mesa structure with sloping side walls, the deposition of the passivation layer in such a way as to minimize the net stress of the passivation layer is facilitated. In addition, the mesa structure has a first stack of mirror layers comprising a semiconductor material doped with a first dopant and having first peripheral oxidized portions extending a first distance into said first stack, and a second stack of mirror layers comprising a semiconductor material doped with a second dopant and having second peripheral oxidized portions extending a second distance into said second stack, wherein the first distance is different from the second distance. By controlling the first distance and the second distance appropriately, the internal stress in the mesa structure can be reduced. |
| 公开日期 | 2012-05-29 |
| 申请日期 | 2010-02-22 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46349]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC DEVICE INNOVATIONS, U.S.A., INC. |
| 推荐引用方式 GB/T 7714 | LI, NEIN-YI,XIE, CHUAN,LEI, CHUN,et al. VCSEL semiconductor device. US8189642. 2012-05-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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