Semiconductor laser having co-doped distributed bragg reflectors
文献类型：专利
| 作者 | DENG, HONGYU; WANG, XIAOZHONG; LEI, CHUN |
| 发表日期 | 2001-10-09 |
| 专利号 | US6301281 |
| 著作权人 | AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser having co-doped distributed bragg reflectors |
| 英文摘要 | This invention provides a semiconductor laser device, such as a Vertical Cavity Surface-Emitting Laser (VCSEL) device which includes a Distributed Bragg Reflector (DBR) made up of layers which are co-doped with different dopants. For instance, a p-type DBR produced by organometallic vapor-phase epitaxy (OMPVE) includes layers having, respectively, a low refractive index and a high refractive index, the layers being made, respectively, of high-Al AlGaAs and low-Al AlGaAs. According to the invention, C, by itself or in addition to Mg, is used as the dopant in the high-Al AlGaAs layers, and Mg is used in the low-Al AlGaAs layers. Because of this co-doping, the semiconductor laser device achieves low series resistance and operating voltage, with good manufacturability. |
| 公开日期 | 2001-10-09 |
| 申请日期 | 1998-08-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46362]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. |
| 推荐引用方式 GB/T 7714 | DENG, HONGYU,WANG, XIAOZHONG,LEI, CHUN. Semiconductor laser having co-doped distributed bragg reflectors. US6301281. 2001-10-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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