Integrated HBT and VCSEL structure and method of fabrication
文献类型：专利
| 作者 | HOLM, PAIGE M.; ACKLEY, DONALD E. |
| 发表日期 | 1993-06-01 |
| 专利号 | US5216686 |
| 著作权人 | SEIKO EPSON CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Integrated HBT and VCSEL structure and method of fabrication |
| 英文摘要 | A vertical cavity surface emitting laser (VCSEL), comprised of a first 1/4 wave stack, an active layer and a second 1/4 wave stack, is integrated with a heterojunction bipolar transistor (HBT). The HBT is partially or fully positioned within either the first or the second 1/4 wave stack of the VCSEL. This method improves the planarity of the device, thus allowing for high performance devices to be fabricated. A top or bottom emitting device may be fabricated with the second 1/4 wave stack comprised of dielectric layers or semiconductor epitaxial layers. |
| 公开日期 | 1993-06-01 |
| 申请日期 | 1992-02-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46392]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORPORATION |
| 推荐引用方式 GB/T 7714 | HOLM, PAIGE M.,ACKLEY, DONALD E.. Integrated HBT and VCSEL structure and method of fabrication. US5216686. 1993-06-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。