中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Oxide vertical cavity surface-emitting laser

文献类型:专利

作者GREGORY, N, , DEBRABANDER; AN-NIEN, , CHENG; SUNING, , XIE; WILSON, H, , WIDJAJA
发表日期2005-12-14
专利号GB2399221B
著作权人AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD
国家英国
文献子类授权发明
其他题名Oxide vertical cavity surface-emitting laser
英文摘要A method for forming an oxide VCSEL (vertical cavity surface-emitting laser) includes forming a VCSEL structure 10, forming an oxidation cavity 40 partially through the VCSEL structure, oxidizing a layer 18 in the VCSEL structure, forming a first passivation layer 80 over a surface of the oxidation cavity, and forming a second passivation layer 120 over the first passivation layer. An oxide VCSEL structure includes a bottom mirror region 12 an active region 14 atop the bottom mirror region, a top mirror region 16 atop the active region, an oxidation cavity 40 partially through the top mirror region, a first passivation layer 80, covering a surface of the oxidation cavity, and a second passivation 120 layer covering the first passivation layer.; In both the method and the structure, the first passivation layer can be made of silicon nitride (SiN) while the second passivation layer can be made of silicon oxynitride (SiON).
公开日期2005-12-14
申请日期2004-01-09
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/46468]  
专题半导体激光器专利数据库
作者单位AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD
推荐引用方式
GB/T 7714
GREGORY, N, , DEBRABANDER,AN-NIEN, , CHENG,SUNING, , XIE,et al. Oxide vertical cavity surface-emitting laser. GB2399221B. 2005-12-14.

入库方式: OAI收割

来源:西安光学精密机械研究所

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