Oxide vertical cavity surface-emitting laser
文献类型:专利
作者 | GREGORY, N, , DEBRABANDER; AN-NIEN, , CHENG; SUNING, , XIE; WILSON, H, , WIDJAJA |
发表日期 | 2005-12-14 |
专利号 | GB2399221B |
著作权人 | AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD |
国家 | 英国 |
文献子类 | 授权发明 |
其他题名 | Oxide vertical cavity surface-emitting laser |
英文摘要 | A method for forming an oxide VCSEL (vertical cavity surface-emitting laser) includes forming a VCSEL structure 10, forming an oxidation cavity 40 partially through the VCSEL structure, oxidizing a layer 18 in the VCSEL structure, forming a first passivation layer 80 over a surface of the oxidation cavity, and forming a second passivation layer 120 over the first passivation layer. An oxide VCSEL structure includes a bottom mirror region 12 an active region 14 atop the bottom mirror region, a top mirror region 16 atop the active region, an oxidation cavity 40 partially through the top mirror region, a first passivation layer 80, covering a surface of the oxidation cavity, and a second passivation 120 layer covering the first passivation layer.; In both the method and the structure, the first passivation layer can be made of silicon nitride (SiN) while the second passivation layer can be made of silicon oxynitride (SiON). |
公开日期 | 2005-12-14 |
申请日期 | 2004-01-09 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/46468] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD |
推荐引用方式 GB/T 7714 | GREGORY, N, , DEBRABANDER,AN-NIEN, , CHENG,SUNING, , XIE,et al. Oxide vertical cavity surface-emitting laser. GB2399221B. 2005-12-14. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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