Vertical cavity surface emitting laser diode and a method for producing the same
文献类型：专利
| 作者 | ONISHI, YUTAKA |
| 发表日期 | 2010-10-12 |
| 专利号 | US7813403 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Vertical cavity surface emitting laser diode and a method for producing the same |
| 英文摘要 | A vertical cavity surface emitting laser diode (VCSEL) with a new structure is disclosed. The VCSEL of the invention provides the active layer, the first spacer layer, the tunnel junction, the second spacer layer burying the tunnel junction. Only the first spacer layer is ion-implanted to form a high-resistive region around the tunnel junction. The current injected into the second spacer layer is confined by the tunnel junction to reach the active layer, which reduces the increase of the parasitic resistance of the device. The high-resistive region around the tunnel junction reduces the parasitic capacitance of the device. |
| 公开日期 | 2010-10-12 |
| 申请日期 | 2008-09-22 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46471]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | ONISHI, YUTAKA. Vertical cavity surface emitting laser diode and a method for producing the same. US7813403. 2010-10-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。