Long-wavelength VCSELs and method of manufacturing same
文献类型:专利
作者 | FORREST, STEPHEN; GOKHALE, MILIND R.; WANG, HONGSHENG |
发表日期 | 2002-03-26 |
专利号 | US6362069 |
著作权人 | TRUSTEES OF PRINCETON UNIVERSITY, THE |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Long-wavelength VCSELs and method of manufacturing same |
英文摘要 | The present invention provides a method of manufacturing VCSELs which involves a flip-bonding process wherein the top surface of the VCSEL wafer is bonded face down onto a surrogate substrate. The process begins in a manner similar to traditional double dielectric stack based VCSEL, but then involves flip-bonding the wafer onto an In or Ag epoxy coated surrogate substrate. The InP substrate is then selectively etched. After flip-bonding the wafer fabrication proceeds on the freshly etched surface which now forms the top surface. Next, standard mesa-isolation and contact formation techniques are performed on this newly etched surface. |
公开日期 | 2002-03-26 |
申请日期 | 2000-12-28 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/46675] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | TRUSTEES OF PRINCETON UNIVERSITY, THE |
推荐引用方式 GB/T 7714 | FORREST, STEPHEN,GOKHALE, MILIND R.,WANG, HONGSHENG. Long-wavelength VCSELs and method of manufacturing same. US6362069. 2002-03-26. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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