中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Long-wavelength VCSELs and method of manufacturing same

文献类型:专利

作者FORREST, STEPHEN; GOKHALE, MILIND R.; WANG, HONGSHENG
发表日期2002-03-26
专利号US6362069
著作权人TRUSTEES OF PRINCETON UNIVERSITY, THE
国家美国
文献子类授权发明
其他题名Long-wavelength VCSELs and method of manufacturing same
英文摘要The present invention provides a method of manufacturing VCSELs which involves a flip-bonding process wherein the top surface of the VCSEL wafer is bonded face down onto a surrogate substrate. The process begins in a manner similar to traditional double dielectric stack based VCSEL, but then involves flip-bonding the wafer onto an In or Ag epoxy coated surrogate substrate. The InP substrate is then selectively etched. After flip-bonding the wafer fabrication proceeds on the freshly etched surface which now forms the top surface. Next, standard mesa-isolation and contact formation techniques are performed on this newly etched surface.
公开日期2002-03-26
申请日期2000-12-28
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/46675]  
专题半导体激光器专利数据库
作者单位TRUSTEES OF PRINCETON UNIVERSITY, THE
推荐引用方式
GB/T 7714
FORREST, STEPHEN,GOKHALE, MILIND R.,WANG, HONGSHENG. Long-wavelength VCSELs and method of manufacturing same. US6362069. 2002-03-26.

入库方式: OAI收割

来源:西安光学精密机械研究所

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