VCSEL and manufacturing method of the same
文献类型：专利
| 作者 | PARK, HYUNDAI; KIM, GYUNGOCK |
| 发表日期 | 2015-08-25 |
| 专利号 | US9118160 |
| 著作权人 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | VCSEL and manufacturing method of the same |
| 英文摘要 | Provided is a vertical-cavity surface-emitting laser (VCSEL). The VCSEL includes a silicon substrate, a lower reflective layer disposed on the silicon substrate, a light generation laser disposed on the lower reflective layer, and an upper reflective layer disposed on the light generation layer. The lower reflective layer, the light generation layer, and the upper reflective layer may include a III-V semiconductor light source-active layer monolithically integrated on a first impurity layer by wafer bonding. |
| 公开日期 | 2015-08-25 |
| 申请日期 | 2014-03-03 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46897]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 推荐引用方式 GB/T 7714 | PARK, HYUNDAI,KIM, GYUNGOCK. VCSEL and manufacturing method of the same. US9118160. 2015-08-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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