Method of fabricating top emitting ridge VCSEL with self-aligned contact and sidewall reflector
文献类型：专利
| 作者 | SHIEH, CHAN-LONG; LEBBY, MICHAEL S. |
| 发表日期 | 2000-12-05 |
| 专利号 | US6156582 |
| 著作权人 | FINISAR CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of fabricating top emitting ridge VCSEL with self-aligned contact and sidewall reflector |
| 英文摘要 | A method of fabricating a ridge VCSEL having a first stack of mirrors, a second stack of mirrors and an active area sandwiched therebetween, including the steps of depositing a metal layer, an etchable layer and a masking layer on the second stack, removing portions of the masking layer, the etchable layer and the metal layer to form a mask, using the mask to etch the second stack to form a mesa, removing portions of the etchable layer to expose the metal layer, depositing an additional metal layer on the side of the mesa and the exposed portion of the metal layer to define a light emitting area, removing the etchable and masking layers to expose the metal layer in the light emitting area, and removing the exposed portion of the metal layer to expose the light emitting area. |
| 公开日期 | 2000-12-05 |
| 申请日期 | 1993-06-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47141]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FINISAR CORPORATION |
| 推荐引用方式 GB/T 7714 | SHIEH, CHAN-LONG,LEBBY, MICHAEL S.. Method of fabricating top emitting ridge VCSEL with self-aligned contact and sidewall reflector. US6156582. 2000-12-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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