Semiconductor laser having a transparent light emitting section, and a process of producing the same
文献类型：专利
| 作者 | ARAKAWA, SATOSHI; IWAI, NORIHIRO; ISHIKAWA, TAKUYA; KASUKAWA, AKIHIKO; OHKUBO, MICHIO; NINOMIYA, TAKAO |
| 发表日期 | 1998-05-26 |
| 专利号 | US5757833 |
| 著作权人 | FURUKAWA ELECTRIC CO., LTD., THE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser having a transparent light emitting section, and a process of producing the same |
| 英文摘要 | A semiconductor laser is produced by forming a laser activation section and a light emitting section having an InGaAsP layer as a quantum well on a GaAs substrate according to metal organic chemical vapor deposition by using a selective area growth mask, in such a manner that the laser activation section and the light emitting section have different film thicknesses. The laser activation section includes a laser activation layer whose oscillation wavelength is set to 0.8 to 1 mu m, and the light emitting section includes an optical waveguide layer having a broader forbidden band than the laser activation layer. |
| 公开日期 | 1998-05-26 |
| 申请日期 | 1996-11-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47219]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO., LTD., THE |
| 推荐引用方式 GB/T 7714 | ARAKAWA, SATOSHI,IWAI, NORIHIRO,ISHIKAWA, TAKUYA,et al. Semiconductor laser having a transparent light emitting section, and a process of producing the same. US5757833. 1998-05-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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