Mesa devices fabricated on channeled substrates
文献类型：专利
| 作者 | CHO, ALFRED Y.; TSANG, WON-TIEN |
| 发表日期 | 1980-11-25 |
| 专利号 | US4236122 |
| 著作权人 | BELL TELEPHONE LABORATORIES, INCORPORATED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Mesa devices fabricated on channeled substrates |
| 英文摘要 | Parallel channels are separated by ridges formed in a semiconductor body in such a way that each channel is wider at its base than at its top. Molecular beam epitaxy is used to deposit semiconductor layers on the ridges and in the channels. Because each channel is narrower at its top than at its base, the configuration is essentially self-masking. That is, the layers in the channel are physically separate from those on the ridges, as would be metallic contacts deposited on the layers. This technique is employed in the fabrication of a plurality of self-aligned, stripe geometry, mesa double heterostructure junction lasers. |
| 公开日期 | 1980-11-25 |
| 申请日期 | 1978-04-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47232]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | BELL TELEPHONE LABORATORIES, INCORPORATED |
| 推荐引用方式 GB/T 7714 | CHO, ALFRED Y.,TSANG, WON-TIEN. Mesa devices fabricated on channeled substrates. US4236122. 1980-11-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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