Method of producing stripe-structure semiconductor laser
文献类型：专利
| 作者 | YOSHIKAWA, AKIO; SUGINO, TAKASHI |
| 发表日期 | 1990-08-14 |
| 专利号 | US4948753 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of producing stripe-structure semiconductor laser |
| 英文摘要 | A semiconductor laser and a method of producing the same wherein the semiconductor laser is produced by forming a stripe-shaped projection on the surface of a semiconductor substrate, and forming multilayered thin films with a double heterostructure including an active layer on said semiconductor substrate by using the metal organic chemical vapor phase epitaxial growth method or the molecular beam epitaxial growth method. Thus, a buried stripe-structure semiconductor laser can be produced by a sequence of crystal growth processes. |
| 公开日期 | 1990-08-14 |
| 申请日期 | 1987-10-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47242]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | YOSHIKAWA, AKIO,SUGINO, TAKASHI. Method of producing stripe-structure semiconductor laser. US4948753. 1990-08-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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