Semiconductor laser including an aluminum-rich AlGaAs etch stopping layer
文献类型：专利
| 作者 | SHIMA, AKIHIRO; MIURA, TAKESHI; KADOWAKI, TOMOKO; HAYAFUJI, NORIO |
| 发表日期 | 1994-10-18 |
| 专利号 | US5357535 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser including an aluminum-rich AlGaAs etch stopping layer |
| 英文摘要 | In accordance with the invention, after a crystal growth is carried out successively to produce at least a first conductivity type lower cladding layer, and active layer, a second conductivity type first upper cladding layer of AlGaAs having an AlAs composition ratio of 0.38 to 0.6, an etching stopper layer of AlGaAs having an AlAs composition ratio of more than 0.6, and a second conductivity type second upper cladding layer of AlGaAs having an AlAs composition ratio of 0.38 to 0.6, the second upper cladding layer is selectively etched using an etchant including an organic acid and hydrogen peroxide, thereby forming a ridge. As a result, a ridge-type semiconductor laser device which has a desirable laser structure and an oscillation wavelength below 830 nm can be produced easily with improved controllability and reproducibility. |
| 公开日期 | 1994-10-18 |
| 申请日期 | 1993-01-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47244]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | SHIMA, AKIHIRO,MIURA, TAKESHI,KADOWAKI, TOMOKO,et al. Semiconductor laser including an aluminum-rich AlGaAs etch stopping layer. US5357535. 1994-10-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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