Article comprising a semiconductor laser with carrier stopper layer
文献类型：专利
| 作者 | BELENKY, GREGORY; KZARINOV, RUDOLF F.; KOJIMA, KEISUKE; REYNOLDS, JR., CLAUDE L. |
| 发表日期 | 1996-07-23 |
| 专利号 | US5539762 |
| 著作权人 | AT&T IPM CORP. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Article comprising a semiconductor laser with carrier stopper layer |
| 英文摘要 | A novel InP-based semiconductor laser comprises an unpatterned active region that is essentially co-extensive with the substrate of the laser, an electron stopper layer, and a separate confinement heterostructure (SCH) layer that has a portion of thickness greater than the thickness of the remainder of the SCH layer. The difference in thickness serves to provide lateral guiding of the laser mode. A patterned current blocking layer is disposed on the SCH layer, with a window in the blocking layer defining the region of increased thickness of the SCH layer. The inventive laser is readily manufacturable and can have improved properties. |
| 公开日期 | 1996-07-23 |
| 申请日期 | 1995-05-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47253]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AT&T IPM CORP. |
| 推荐引用方式 GB/T 7714 | BELENKY, GREGORY,KZARINOV, RUDOLF F.,KOJIMA, KEISUKE,et al. Article comprising a semiconductor laser with carrier stopper layer. US5539762. 1996-07-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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