Semiconductor metal contacting structure and a light emitting device
文献类型：专利
| 作者 | IKEDA, MASAO; ITO, SATOSHI; IOCHI, YOSHINO; MIYAJIMA, TAKAO; OZAWA, MASAFUMI; AKIMOTO, KATSUHIRO; ISHIBASH, AKIRA; HIEI, FUTOSHI |
| 发表日期 | 1995-11-28 |
| 专利号 | US5471067 |
| 著作权人 | SONY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor metal contacting structure and a light emitting device |
| 英文摘要 | A semiconductor laser capable of emitting blue or green light is disclosed. The semiconductor laser comprises an n-type ZnMgSSe cladding layer, an active layer, a p-type ZnMgSSe cladding layer, a p-type ZnSe contact layer and a p-type ZnTe contact layer which are stacked in this sequence on an n-type GaAs substrate. A p-side electrode is provided on the p-type ZnTe contact layer. An n-side electrode is provided on the back surface of the n-type GaAs substrate. A multiquantum well layer comprising quantum wells made of p-type ZnTe and barriers made of p-type ZnSe is provided in the depletion layer produced in the p-type ZnSe contact layer along the junction interface between the p-type ZnSe contact layer and the p-type ZnTe contact layer. Holes injected from the p-side electrode pass through the junction by the resonant tunneling effect through quantum levels formed in the quantum wells of the multiquantum well layer. |
| 公开日期 | 1995-11-28 |
| 申请日期 | 1993-06-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47262]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | IKEDA, MASAO,ITO, SATOSHI,IOCHI, YOSHINO,et al. Semiconductor metal contacting structure and a light emitting device. US5471067. 1995-11-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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