Semiconductor light-emitting element and manufacturing method thereof
文献类型：专利
| 作者 | ORITA, KENJI |
| 发表日期 | 2013-10-29 |
| 专利号 | US8569088 |
| 著作权人 | PANASONIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light-emitting element and manufacturing method thereof |
| 英文摘要 | A semiconductor light-emitting element includes: a substrate; and a nitride semiconductor multilayer film provided on an upper surface of the substrate and including an active layer. A recess, a stepped portion, or a protruding portion is formed in an active layer or a layer that contacts a lower surface of the active layer. A ridge stripe, which has a front end facet and a rear end facet and serves as an optical waveguide, is formed in an upper part of the nitride semiconductor multilayer film. The distance from a lateral center of the ridge stripe to a lateral center of the recess, the stepped portion, or the protruding portion changes continuously or in stages from the front end facet toward the rear end facet. Bandgap energy of the active layer changes continuously or in stages from the front end facet toward the rear end facet. |
| 公开日期 | 2013-10-29 |
| 申请日期 | 2012-09-15 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47266]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PANASONIC CORPORATION |
| 推荐引用方式 GB/T 7714 | ORITA, KENJI. Semiconductor light-emitting element and manufacturing method thereof. US8569088. 2013-10-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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