Method for fabricating bragg reflector using in situ laser reflectometry
文献类型：专利
| 作者 | BAEK, JONG-HYEOB; LEE, BUN |
| 发表日期 | 1999-01-05 |
| 专利号 | US5856206 |
| 著作权人 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for fabricating bragg reflector using in situ laser reflectometry |
| 英文摘要 | A Bragg reflector with a uniform thickness is fabricated by means of an in-situ laser reflectometer. In order to fabricate the Bragg reflector, a plurality of buffer layers are formed on a semiconductor substrate. Then, first and second epitaxial layers are alternatively grown on the buffer layers. While growing the epitaxial layers, the thickness of the first and second epitaxial layers are continuously measured by using a laser beam having the same wavelength as a reflective wavelength of the Bragg reflector. In this way, the thickness of the Bragg reflector is precisely controlled according to the measurements, so that the Bragg reflector may be fabricated uniformly with a predetermined thickness. |
| 公开日期 | 1999-01-05 |
| 申请日期 | 1997-04-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47272]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 推荐引用方式 GB/T 7714 | BAEK, JONG-HYEOB,LEE, BUN. Method for fabricating bragg reflector using in situ laser reflectometry. US5856206. 1999-01-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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