中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Diffusion procedure for semiconductor compound

文献类型:专利

作者CAMLIBEL, IRFAN; GUGGENHEIM, HOWARD J.; SINGH, SHOBHA; VAN UITERT, LEGRAND G.; ZYDZIK, GEORGE J.
发表日期1985-03-05
专利号US4502898
著作权人BELL TELEPHOE LABORATORIES, INCORPORATED
国家美国
文献子类授权发明
其他题名Diffusion procedure for semiconductor compound
英文摘要A process is described for doping compound semiconductors using a metal fluoride (e.g., ZnF2) as the source of dopant. The anhydrous metal fluoride is put down on the surface of the compound semiconductor, capped with a suitable encapsulant and heat treated to promote the diffusion. The heat treatment can be carried out in air without danger of surface damage to the compound semiconductor. Also, the diffusion is better controlled as to depth of diffusion and boundary delineation.
公开日期1985-03-05
申请日期1983-12-21
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/47276]  
专题半导体激光器专利数据库
作者单位BELL TELEPHOE LABORATORIES, INCORPORATED
推荐引用方式
GB/T 7714
CAMLIBEL, IRFAN,GUGGENHEIM, HOWARD J.,SINGH, SHOBHA,et al. Diffusion procedure for semiconductor compound. US4502898. 1985-03-05.

入库方式: OAI收割

来源:西安光学精密机械研究所

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