Diffusion procedure for semiconductor compound
文献类型:专利
作者 | CAMLIBEL, IRFAN; GUGGENHEIM, HOWARD J.; SINGH, SHOBHA; VAN UITERT, LEGRAND G.; ZYDZIK, GEORGE J. |
发表日期 | 1985-03-05 |
专利号 | US4502898 |
著作权人 | BELL TELEPHOE LABORATORIES, INCORPORATED |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Diffusion procedure for semiconductor compound |
英文摘要 | A process is described for doping compound semiconductors using a metal fluoride (e.g., ZnF2) as the source of dopant. The anhydrous metal fluoride is put down on the surface of the compound semiconductor, capped with a suitable encapsulant and heat treated to promote the diffusion. The heat treatment can be carried out in air without danger of surface damage to the compound semiconductor. Also, the diffusion is better controlled as to depth of diffusion and boundary delineation. |
公开日期 | 1985-03-05 |
申请日期 | 1983-12-21 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/47276] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | BELL TELEPHOE LABORATORIES, INCORPORATED |
推荐引用方式 GB/T 7714 | CAMLIBEL, IRFAN,GUGGENHEIM, HOWARD J.,SINGH, SHOBHA,et al. Diffusion procedure for semiconductor compound. US4502898. 1985-03-05. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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