Optoelectronic semiconductor device with mesa
文献类型：专利
| 作者 | ADACHI, HIDEO; MATSUDA, KENICHI |
| 发表日期 | 1995-04-18 |
| 专利号 | US5408105 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Optoelectronic semiconductor device with mesa |
| 英文摘要 | There are disclosed a low driving voltage surface emitting semiconductor laser and an optoelectronic integrated which comprises a two-dimensional array of such surface emitting semiconductor lasers which are modulatable with input signals of small voltage amplitudes. In an embodiment of the present invention, an optical semiconductor device includes a GaAs substrate 105, and an epitaxial growth layer structure on the GaAs substrate, the epitaxial growth layer structure including in the named order a p type GaAs/AlAs multilayer semiconductor mirror layer 104, an active layer 103 and an n type GaAs/AlAs multilayer semiconductor mirror layer 102. The epitaxial growth layer structure is etched to the depth of the active layer in forming a mesa, while the p type mirror layer remains unetched throughout a top surface of the semiconductor substrate. |
| 公开日期 | 1995-04-18 |
| 申请日期 | 1993-02-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47279]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | ADACHI, HIDEO,MATSUDA, KENICHI. Optoelectronic semiconductor device with mesa. US5408105. 1995-04-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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