Enhanced planarity in GaN edge emitting lasers
文献类型：专利
| 作者 | BHAT, RAJARAM |
| 发表日期 | 2013-01-15 |
| 专利号 | US8355422 |
| 著作权人 | THORLABS QUANTUM ELECTRONICS, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Enhanced planarity in GaN edge emitting lasers |
| 英文摘要 | A GaN edge emitting laser is provided comprising a semi-polar GaN substrate, an active region, N-side and P-side waveguiding layers, and N-type and P-type cladding layers. The GaN substrate defines a 20 21 crystal growth plane and a glide plane. The N-side and P-side waveguiding layers comprise a GaInN/GaN or GaInN/GaInN superlattice (SL) waveguiding layers. The SL layers of the N-side and P-side SL waveguiding layers have layer thicknesses between approximately 1 nm and 5 nm that are optimized for waveguide planarity. In another embodiments, planarization is enhanced by ensuring that the N-side and P-side GaN-based waveguiding layers are grown at a growth rate that exceeds approximately 0.09 nm/s, regardless of whether the N-side and P-side GaN-based waveguiding layers are provided as a GaInN/GaN SL, GaInN/GaInN SL or as bulk layers. In further embodiments, planarization is enhanced by selecting optimal SL layer thicknesses and growth rates. |
| 公开日期 | 2013-01-15 |
| 申请日期 | 2012-06-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47284]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THORLABS QUANTUM ELECTRONICS, INC. |
| 推荐引用方式 GB/T 7714 | BHAT, RAJARAM. Enhanced planarity in GaN edge emitting lasers. US8355422. 2013-01-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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