Method and device for preventing zinc/iron interaction in a semiconductor laser
文献类型：专利
| 作者 | SHTENGEL, GLEB E.; CHAKRABARTI, UTPAL KUMAR; LENTZ, CHARLES WILLIAM; JOYNER, CHARLES H.; OUGAZZADEN, ABDALLAH |
| 发表日期 | 2003-04-29 |
| 专利号 | US6556605 |
| 著作权人 | LUCENT TECHNOLOGIES, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method and device for preventing zinc/iron interaction in a semiconductor laser |
| 英文摘要 | A mesa stripe buried heterostructure semiconductor laser with no intediffusion of atoms between doped regions and a method of its formation are disclosed. A double dielectric mask is used to form the mesa stripe. The first mask is then partially etched and a Si-doped InP layer is selectively grown. The first and second mask are subsequently etched away and an InP(Zn) clad layer, along with a Zn-doped InGaAs contact layer, are formed. This way, the resulting structure has no contact between the InP(Zn) clad layer and the InP(Fe) layer, and the dopant atoms interdiffusion is suppressed. |
| 公开日期 | 2003-04-29 |
| 申请日期 | 2000-02-29 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47291]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUCENT TECHNOLOGIES, INC. |
| 推荐引用方式 GB/T 7714 | SHTENGEL, GLEB E.,CHAKRABARTI, UTPAL KUMAR,LENTZ, CHARLES WILLIAM,et al. Method and device for preventing zinc/iron interaction in a semiconductor laser. US6556605. 2003-04-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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