Semiconductor laser and manufacturing process thereof
文献类型：专利
| 作者 | KOBAYASHI, MASAHIDE |
| 发表日期 | 2012-02-07 |
| 专利号 | US8111728 |
| 著作权人 | RENESAS ELECTRONICS CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser and manufacturing process thereof |
| 英文摘要 | A semiconductor laser has a semiconductor substrate, a lower cladding layer formed on the semiconductor substrate, an active layer disposed above the lower cladding layer, a first upper cladding layer disposed above the active layer, a second upper cladding layer disposed above the first upper cladding layer and having a mesa structure, a high-order mode filter layer formed on both side faces of the second upper cladding layer, continuously extending from the both side faces onto at least a part of a side region on both sides of the second upper cladding layer and having a band gap not exceeding a band gap of the active layer, and a block layer formed on the high-order mode filter layer and on a side region on both sides of the second upper cladding layer and including a layer having a band gap greater than a band gap of the active layer. |
| 公开日期 | 2012-02-07 |
| 申请日期 | 2009-11-13 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47296]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RENESAS ELECTRONICS CORPORATION |
| 推荐引用方式 GB/T 7714 | KOBAYASHI, MASAHIDE. Semiconductor laser and manufacturing process thereof. US8111728. 2012-02-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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