Monolithic integrated optoelectronic semiconductor component and process for manufacturing the same
文献类型：专利
| 作者 | LAUBE, GERT; SCHILLING, MICHAEL; WUNSTEL, KLAUS; IDLER, WILFRIED; GROSSKOPF, KARIN; LACH, EUGEN |
| 发表日期 | 1999-03-30 |
| 专利号 | US5889902 |
| 著作权人 | OCLARO (NORTH AMERICA), INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Monolithic integrated optoelectronic semiconductor component and process for manufacturing the same |
| 英文摘要 | An integrated optoelectronic semiconductor component is presented, which can equally process light signals of any polarization direction. Such semiconductor components are used for digital optical telecommunications. The semiconductor component has active (A) and passive (B) waveguide sections, which comprise a number of semiconductor layers (SP) with so-called multiple quantum well structures. The semiconductor layers (SP) are deposited by a process known as selective area growth (SAG). A portion of the semiconductor layers has a lattice constant which is smaller than the lattice constant of a substrate (SUB). This creates a biaxial tensile strain in these layers. The tensile strain is optimized in the active waveguide sections (A) to attain polarization independence. Furthermore a process is described whereby such a semiconductor component can be manufactured. |
| 公开日期 | 1999-03-30 |
| 申请日期 | 1997-02-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47304]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OCLARO (NORTH AMERICA), INC. |
| 推荐引用方式 GB/T 7714 | LAUBE, GERT,SCHILLING, MICHAEL,WUNSTEL, KLAUS,et al. Monolithic integrated optoelectronic semiconductor component and process for manufacturing the same. US5889902. 1999-03-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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