Integrated semiconductor laser device and method of manufacture thereof
文献类型：专利
| 作者 | BOOIJ, WILFRED; SILVER, MARK; BERRY, GRAHAM MICHAEL |
| 发表日期 | 2005-08-16 |
| 专利号 | US6931041 |
| 著作权人 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Integrated semiconductor laser device and method of manufacture thereof |
| 英文摘要 | An integrated buried heterojunction laser optically coupled to a ridge waveguide electro-absorption (EA) optical modulator having a raised ridge structure is manufactured on a single semiconductor substrate on which a plurality of semiconductor layers are grown, including at least one active layer through which optical radiation is coupled from the laser to the waveguide. Semiconductor layers above the active layer form a laser current conduction region and semiconductor layers adjacent the active layer form a laser current confinement region. The ridge structure is formed from one or more layers also used to form the laser current conduction region. The layers used to form the laser current confinement region do not extend adjacent the ridge structure. |
| 公开日期 | 2005-08-16 |
| 申请日期 | 2003-06-12 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47316]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 推荐引用方式 GB/T 7714 | BOOIJ, WILFRED,SILVER, MARK,BERRY, GRAHAM MICHAEL. Integrated semiconductor laser device and method of manufacture thereof. US6931041. 2005-08-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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