MULTIPLE ANODIZATION SCHEME FOR PRODUCING GaAs LAYERS OF NONUNIFORM THICKNESS
文献类型：专利
| 作者 | LOGAN, RALPH ANDRE; MILLER, BARRY IRWIN |
| 发表日期 | 1975-01-07 |
| 专利号 | US3859178 |
| 著作权人 | BELL TELEPHONE LABORATORIES, INCORPORATED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | MULTIPLE ANODIZATION SCHEME FOR PRODUCING GaAs LAYERS OF NONUNIFORM THICKNESS |
| 英文摘要 | A multiple anodization technique is described for producing GaAs layers of nonuniform thickness; that is, GaAs layers having substantially rectangular steps or grooves of the type capable of guiding light. The technique includes the following steps: (1) growing a native oxide layer on a major surface of the GaAs layer by submersing the GaAs layer in an anodization bath of concentrated H.sub.2 O.sub.2 having a pH less than 6; (2) removing selected portions of the oxide layer so as to expose the GaAs layer adjacent to the desired step region; and (3) immersing the surface again in an anodization bath of concentrated H.sub.2 O.sub.2 having a pH less than 6. Also described are techniques for growing by liquid phase epitaxy an AlGaAs layer over the resultant GaAs step structure in a manner which alleviates two problems: the formation of deleterious oxides on the GaAs layer and the dissolving of the step configuration while in contact with the AlGaAs growth solution. |
| 公开日期 | 1975-01-07 |
| 申请日期 | 1974-01-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47320]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | BELL TELEPHONE LABORATORIES, INCORPORATED |
| 推荐引用方式 GB/T 7714 | LOGAN, RALPH ANDRE,MILLER, BARRY IRWIN. MULTIPLE ANODIZATION SCHEME FOR PRODUCING GaAs LAYERS OF NONUNIFORM THICKNESS. US3859178. 1975-01-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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