Semiconductor laser of visible ray region having window structure
文献类型：专利
| 作者 | KINOSHITA, HIDEAKI |
| 发表日期 | 1992-06-02 |
| 专利号 | US5119387 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA A CORP. OF JAPAN |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser of visible ray region having window structure |
| 英文摘要 | A semiconductor laser including a semiconductor substrate having a high resistance region at both ends, an active layer sandwiched between two clad layers, and a window structure having both end surfaces facing each other. Each of the both end surfaces includes end portions of the active layer and the two clad layers, respectively. Since each of the end portions is disposed above the high resistance region of the semiconductor region of the semiconductor substrate, it has a band gap higher than an internal portion of the active layer and the two clad layers, respectively, thereby providing an improved window effect. |
| 公开日期 | 1992-06-02 |
| 申请日期 | 1991-08-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47324]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA A CORP. OF JAPAN |
| 推荐引用方式 GB/T 7714 | KINOSHITA, HIDEAKI. Semiconductor laser of visible ray region having window structure. US5119387. 1992-06-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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