Laser diode having narrowed radiation angle characteristic
文献类型:专利
| 作者 | YAMADA, HIROHITO |
| 发表日期 | 1997-12-02 |
| 专利号 | US5693965 |
| 著作权人 | NEC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Laser diode having narrowed radiation angle characteristic |
| 英文摘要 | An active layer 102 and a clad layer 103 are formed on a semiconductor substrate 10 The active layer including an optical guide layer and an optical confinement layer/formed so that the thickness of the active layer gradually decreases toward a light-emission-side end facet. Since a spot size is gradually expanded toward an emission end, the radiation angle of an emitted beam is narrowed and characteristics including a threshold current become superior. |
| 公开日期 | 1997-12-02 |
| 申请日期 | 1996-11-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47335] ![]() |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | YAMADA, HIROHITO. Laser diode having narrowed radiation angle characteristic. US5693965. 1997-12-02. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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