Group-III nitride semiconductor laser device
文献类型：专利
| 作者 | UENO, MASAKI; KATAYAMA, KOJI; IKEGAMI, TAKATOSHI; NAKAMURA, TAKAO; YANASHIMA, KATSUNORI; NAKAJIMA, HIROSHI |
| 发表日期 | 2014-12-09 |
| 专利号 | US8908732 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Group-III nitride semiconductor laser device |
| 英文摘要 | A group-III nitride semiconductor laser device comprises: a laser structure including a semiconductor region and a support base having a semipolar primary surface of group-III nitride semiconductor; a first reflective layer, provided on a first facet of the region, for a lasing cavity of the laser device; and a second reflective layer, provided on a second facet of the region, for the lasing cavity. The laser structure includes a laser waveguide extending along the semipolar surface. A c+ axis vector indicating a <0001> axial direction of the base tilts toward an m-axis of the group-III nitride semiconductor at an angle of not less than 63 degrees and less than 80 degrees with respect to a vector indicating a direction of an axis normal to the semipolar surface. The first reflective layer has a reflectance of less than 60% in a wavelength range of 525 to 545 nm. |
| 公开日期 | 2014-12-09 |
| 申请日期 | 2013-05-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47338]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | UENO, MASAKI,KATAYAMA, KOJI,IKEGAMI, TAKATOSHI,et al. Group-III nitride semiconductor laser device. US8908732. 2014-12-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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