Compound semiconductor device and fabrication method of producing the compound semiconductor device
文献类型：专利
| 作者 | OUCHI, TOSHIHIKO, C/O CANON KABUSHIKI KAISHA; SAKATA, HAJIME, C/O CANON KABUSHIKI KAISHA; OHGURI, NORIAKI, C/O CANON KABUSHIKI KAISHA; UCHIDA, MAMORU, C/O CANON KABUSHIKI KAISHA |
| 发表日期 | 2000-02-16 |
| 专利号 | EP0572917B1 |
| 著作权人 | CANON KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Compound semiconductor device and fabrication method of producing the compound semiconductor device |
| 英文摘要 | A fabrication method of producing a compound semiconductor device includes a first growth step of performing an epitaxial growth on a semiconductor substrate in a growth furnace to form a wafer, an interruption step of once interrupting the epitaxial growth and putting the wafer formed in the first growth step out of the growth furnace, and a second growth step of putting the wafer processed in the interruption step into the growth furnace and performing the second growth on the fine uneven structure of the wafer. The interruption step includes an uneven structure forming step of forming a fine uneven structure on an epitaxial crystalline surface of the wafer, on which a second growth is needed, formed in the first growth step, or an uneven structure forming step of forming at least two kinds of fine uneven structures which are superposed on the common epitaxial crystal surface of the wafer formed in the first growth step. According to the fabrication method, a compound semiconductor device can be readily fabricated, which includes a semiconductor substrate, a first growth epitaxial-layer structure on the substrate, at least one kind of fine uneven structure or at least two kinds of superposed fine uneven structures on the entire epitaxial crystal surface of the first growth epitaxial-layer structure, and a second growth epitaxial-layer structure on the fine uneven structure or structures. |
| 公开日期 | 2000-02-16 |
| 申请日期 | 1993-05-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47340]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | OUCHI, TOSHIHIKO, C/O CANON KABUSHIKI KAISHA,SAKATA, HAJIME, C/O CANON KABUSHIKI KAISHA,OHGURI, NORIAKI, C/O CANON KABUSHIKI KAISHA,et al. Compound semiconductor device and fabrication method of producing the compound semiconductor device. EP0572917B1. 2000-02-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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