化合物半導体薄膜結晶の成長方法
文献类型：专利
| 作者 | 杉山 直治; 上條 健; 山田 正理; 大木 芳正 |
| 发表日期 | 1998-04-03 |
| 专利号 | JP2766645B2 |
| 著作权人 | 光技術研究開発株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 化合物半導体薄膜結晶の成長方法 |
| 英文摘要 | PURPOSE:To place contamination-free and good-quality compound semiconductor thin films side by side inside a place by a method wherein one element out of two or more elements constituting a compound semiconductor thin-film crystal is grown in a temperature atmosphere where an adhesion rate (or a detachment rate) differs from each other on different orientation planes. CONSTITUTION:AlGaAs thin film crystals of different compositions are grown epitaxially on a first orientation plane (a) and a second orientation plane (b); a GaAs substrate crystal 10 having these surfaces are first pasted on a sample stage and guided to a growth chamber. The substrate crystal 10 is heated up to a temperature near 610-620 deg.C inside the growth chamber. Under this temperature condition, molecular beams of Ga, As and Al are directed. Under this temperature condition a first AlGaAs thin film crystal 16 is formed on the first orientation plane (a) and a second AlGaAs thin-film crystal 17 is applied to the second orientation plane (b). A composition of Al in the first AlGaAs thin-film crystal 16 is 0.25 and the composition of Al in the second AlGaAs thin-film crystal 17 is 0.8. By this setup, it is possible to form compound semiconductor thin-film crystals of different compositions inside a plane. |
| 公开日期 | 1998-06-18 |
| 申请日期 | 1988-03-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47341]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 光技術研究開発株式会社 |
| 推荐引用方式 GB/T 7714 | 杉山 直治,上條 健,山田 正理,等. 化合物半導体薄膜結晶の成長方法. JP2766645B2. 1998-04-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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