Gallium nitride-based semiconductor laser device, and method for fabricating gallium nitride-based semiconductor laser device
文献类型：专利
| 作者 | KUMANO, TETSUYA; UENO, MASAKI; KYONO, TAKASHI; ENYA, YOHEI; YANASHIMA, KATSUNORI; TASAI, KUNIHIKO; NAKAJIMA, HIROSHI |
| 发表日期 | 2013-07-02 |
| 专利号 | US8477818 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Gallium nitride-based semiconductor laser device, and method for fabricating gallium nitride-based semiconductor laser device |
| 英文摘要 | A gallium nitride-based semiconductor laser device with reduced threshold current. The gallium nitride-based semiconductor laser device is provided with an n-type cladding layer, an n-side light guide layer, an active layer, a p-side light guide layer, and a p-type cladding layer. The n-side light guide layer and the p-side light guide layer both contain indium. Each of indium compositions of the n-side light guide layer and the p-side light guide layer is not less than 2% and not more than 6%. A film thickness of the n-type cladding layer is in the range of not less than 65% and not more than 85% of a total of the film thickness of the n-type cladding layer and a film thickness of the p-type cladding layer. |
| 公开日期 | 2013-07-02 |
| 申请日期 | 2012-03-27 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47342]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | KUMANO, TETSUYA,UENO, MASAKI,KYONO, TAKASHI,et al. Gallium nitride-based semiconductor laser device, and method for fabricating gallium nitride-based semiconductor laser device. US8477818. 2013-07-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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