Buried disordering sources in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth
文献类型：专利
| 作者 | EPLER, JOHN E.; PAOLI, THOMAS L. |
| 发表日期 | 1991-05-07 |
| 专利号 | US5013684 |
| 著作权人 | XEROX CORPORATION, A CORP. OF NY |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Buried disordering sources in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth |
| 英文摘要 | In situ removal of selected or patterned portions of semiconductor layers is accomplished by induced evaporation enhancement to form patterned buried impurity layers in semiconductor devices, such as heterostructure lasers and array lasers, which function as buried impurity induced layer disordering (BIILD) sources upon subsequent annealing. These layers may be formed to either function as buried impurity induced layer disordering (BIILD) sources or function as a reverse bias junction configuration of confining current to the active region of a laser structure. Their discussion here is limited to the first mentioned function. |
| 公开日期 | 1991-05-07 |
| 申请日期 | 1989-03-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47345]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | XEROX CORPORATION, A CORP. OF NY |
| 推荐引用方式 GB/T 7714 | EPLER, JOHN E.,PAOLI, THOMAS L.. Buried disordering sources in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth. US5013684. 1991-05-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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