Semiconductor laser with integrated contact and waveguide
文献类型：专利
| 作者 | STRITTMATTER, ANDRE; CHUA, CHRISTOPHER L.; JOHNSON, NOBLE M. |
| 发表日期 | 2011-09-20 |
| 专利号 | US8023546 |
| 著作权人 | PALO ALTO RESEARCH CENTER INCORPORATED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser with integrated contact and waveguide |
| 英文摘要 | A semiconductor light-emitting device has, in place of a traditional separate cladding layer and contact structure, a non-epitaxial contact and waveguide layer. The non-epitaxial contact and waveguide layer is formed of a conductive material and such that it has a recess therein and over the injection region. Air filling the region together with appropriate choice of material for the non-epitaxial contact and waveguide layer creates desired lateral waveguiding. Metallic silver in one choice for this material. The recess may also be filled with a low-loss material having a refractive index higher than that of the material forming the non-epitaxial contact and waveguide layer. Transparent conductive oxides (e.g., indium tin oxide (ITO), zinc oxide (ZnO), etc.), appropriate metal (e.g., gold), or a composite comprising a conductive oxide and a metal, provide low absorption in the UV and near-IR wavelengths of interest, and are thus good candidate materials for within the recess. |
| 公开日期 | 2011-09-20 |
| 申请日期 | 2009-09-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47346]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PALO ALTO RESEARCH CENTER INCORPORATED |
| 推荐引用方式 GB/T 7714 | STRITTMATTER, ANDRE,CHUA, CHRISTOPHER L.,JOHNSON, NOBLE M.. Semiconductor laser with integrated contact and waveguide. US8023546. 2011-09-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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