Semiconductor device having an active layer made of InGaAlP material
文献类型：专利
| 作者 | NITTA, KOICHI; ISHIKAWA, MASAYUKI; NISHIKAWA, YUKIE; SUGAWARA, HIDETO; WATANABE, MINORU; OKAJIMA, MASAKI; HATAKOSHI, GENICHI |
| 发表日期 | 1993-04-13 |
| 专利号 | US5202895 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor device having an active layer made of InGaAlP material |
| 英文摘要 | A semiconductor laser device comprises a compound semiconductor substrate, a first cladding layer formed on the substrate, an active layer formed on the first cladding layer, made of In.sub.1-y (Ga.sub.1-x Al.sub.x).sub.y P material (0.ltoreq.x<1, 0.ltoreq.y<1), and a second cladding layer formed on the active layer. These first cladding layer, the active layer, and the second cladding layer forms a double heterostructure. A lattice constant of the active layer is larger than that of the substrate by 0.3% or more. The lattice constants of the first and second cladding layers are substantially equal to that of the substrate. |
| 公开日期 | 1993-04-13 |
| 申请日期 | 1991-05-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47355]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | NITTA, KOICHI,ISHIKAWA, MASAYUKI,NISHIKAWA, YUKIE,et al. Semiconductor device having an active layer made of InGaAlP material. US5202895. 1993-04-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。