Laser diode device
文献类型：专利
| 作者 | ICHINOKURA, HIROYASU; KURAMOTO, MASARU |
| 发表日期 | 2012-05-29 |
| 专利号 | US8189638 |
| 著作权人 | SONY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Laser diode device |
| 英文摘要 | A laser diode device comprises an n-type cladding layer containing aluminum (Al); an active layer containing indium (In), gallium (Ga) and nitrogen (N); and a codoped layer that is provided between the substrate and the n-type cladding layer. The codoped layer is also containing gallium (Ga) and nitrogen (N), and is codoped with one of silicon (Si) and germanium (Ge) as impurity working as a donor and one of magnesium (Mg) and zinc (Zn) as impurity working as an acceptor. |
| 公开日期 | 2012-05-29 |
| 申请日期 | 2010-03-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47357]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | ICHINOKURA, HIROYASU,KURAMOTO, MASARU. Laser diode device. US8189638. 2012-05-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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