面発光半導体レーザ及びその製造方法
文献类型：专利
| 作者 | 上野 芳康 |
| 发表日期 | 1999-01-29 |
| 专利号 | JP2880788B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 面発光半導体レーザ及びその製造方法 |
| 英文摘要 | PURPOSE:To make the element life of a surface emission semiconductor laser element long and to stably obtain a sufficiently high optical output by a method wherein the impurity concentration of an AlGaInP active layer and an AlGaInP clad layer is controlled. CONSTITUTION:A double heterostructure multilayer film which is composed of an n-type AlGaInP clad layer 3, an AlGaInP active layer 1 and a p-type AlGaInP clad layer 2 is formed on an n-type GaAs substrate 5 by an epitaxial growth method. Then, a disk-shaped or polygonal SiO2 dielectric film is formed; Zn is diffused to a crystal by a sealed-tube diffusion method by making use of the film as a mask, or an ion implantation method is used and a high- concentration impurity introduction region 4 is formed. Then, a p-type GaAs layer 8, electrodes 7 and dielectric multilayer-film reflecting films 6 are formed. Thereby, since injected carriers are confined in an active region according to a band-gap energy difference, an injection efficiency is enhanced, a sufficiently long element life is obtained and a sufficiently high optical output can stably be obtained. |
| 公开日期 | 1999-04-12 |
| 申请日期 | 1990-11-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47363]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 上野 芳康. 面発光半導体レーザ及びその製造方法. JP2880788B2. 1999-01-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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