Semiconductor substrate, semiconductor device and method of manufacturing the same
文献类型：专利
| 作者 | HASHIMOTO, TADAO; IMAFUJI, OSAMU; YURI, MASAAKI; ISHIDA, MASAHIRO |
| 发表日期 | 2003-07-15 |
| 专利号 | US6593159 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor substrate, semiconductor device and method of manufacturing the same |
| 英文摘要 | A sapphire substrate, a buffer layer of undoped GaN and a compound semiconductor crystal layer successively formed on the sapphire substrate together form a substrate of a light emitting diode. A first cladding layer of n-type GaN, an active layer of undoped In0.2Ga0.8N and a second cladding layer successively formed on the compound semiconductor crystal layer together form a device structure of the light emitting diode. On the second cladding layer, a p-type electrode is formed, and on the first cladding layer, an n-type electrode is formed. In a part of the sapphire substrate opposing the p-type electrode, a recess having a trapezoidal section is formed, so that the thickness of an upper portion of the sapphire substrate above the recess can be substantially equal to or smaller than the thickness of the compound semiconductor crystal layer. |
| 公开日期 | 2003-07-15 |
| 申请日期 | 2000-03-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47364]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | HASHIMOTO, TADAO,IMAFUJI, OSAMU,YURI, MASAAKI,et al. Semiconductor substrate, semiconductor device and method of manufacturing the same. US6593159. 2003-07-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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