Method for fabricating a semiconductor laser device in which the P-type clad layer and the active layer are grown at different rates
文献类型：专利
| 作者 | YOKOTSUKA, TATSUO; TAKAMORI, AKIRA; NAKAJIMA, MASATO; SUZUKI, TOMOKO |
| 发表日期 | 1993-03-02 |
| 专利号 | US5190891 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for fabricating a semiconductor laser device in which the P-type clad layer and the active layer are grown at different rates |
| 英文摘要 | A method for fabricating a semiconductor laser device wherein a first clad layer is formed on a GaAs monocrystal substrate of one conductivity type. The first clad layer is made of a compound semiconductor of one conductivity type represented by the formula, (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P, wherein 0.4 .ltoreq.X.ltoreq. Then, an active layer of a compound semiconductor of the formula. (Al.sub.y Ga.sub.1-y).sub.0.5 In.sub.0.5 P, wherein 0.ltoreq.y.ltoreq.0.35 is formed on the first clad layer, on which a second clad layer of a compound semiconductor of the other conductivity type represented by the formula defined with respect to the first clad layer. At least one of the first and second clad layers is epitaxially grown at a rate of not larger than 0.5 .mu.m/hour sufficient to form a monolayer superlattice structure therein and the active layer is epitaxially grown at a rate of not less than 2.0 .mu.m/hour. |
| 公开日期 | 1993-03-02 |
| 申请日期 | 1991-06-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47367]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | YOKOTSUKA, TATSUO,TAKAMORI, AKIRA,NAKAJIMA, MASATO,et al. Method for fabricating a semiconductor laser device in which the P-type clad layer and the active layer are grown at different rates. US5190891. 1993-03-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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