Semiconductor structure and devices and methods of making same
文献类型：专利
| 作者 | DINKEL, NANCY A.; GOLDSTEIN, BERNARD; ETTENBERG, MICHAEL |
| 发表日期 | 1989-06-27 |
| 专利号 | CA1256550A |
| 著作权人 | RCA CORPORATION |
| 国家 | 加拿大 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor structure and devices and methods of making same |
| 英文摘要 | SEMICONDUCTOR STRUCTURE AND DEVICES AND METHODS OF MAKING SAME ABSTRACT OF THE DISCLOSURE Semiconductor devices such as lasers which include a substrate with a channel therein with a clad layer overlying the substrate and filling the channel exhibit irregularities such as terraces in the surface of the clad layer which are detrimental to device performance. These irregularities are substantially eliminated by forming the channel (14) in a surface (12) of a buffer layer (10) greater than about 4 micrometers thick on the substrate (4) and forming the clad layer (16) over the buffer layer (10) and the channel (14). CW lasers incorporating the principles of the invention exhibit the highest output power in a single spatial mode and maximum output power which have been observed to date. |
| 公开日期 | 1989-06-27 |
| 申请日期 | 1985-10-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47369]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RCA CORPORATION |
| 推荐引用方式 GB/T 7714 | DINKEL, NANCY A.,GOLDSTEIN, BERNARD,ETTENBERG, MICHAEL. Semiconductor structure and devices and methods of making same. CA1256550A. 1989-06-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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