Semiconductor emitting device
文献类型：专利
| 作者 | MIGITA, MASAHITO; TAIKE, AKIRA; SHIIKI, MASATOSHI |
| 发表日期 | 1994-01-11 |
| 专利号 | US5278856 |
| 著作权人 | HITACHI, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor emitting device |
| 英文摘要 | A semiconductor emitting device is provided which is capable of emitting a blue light and, which comprises a double hetero junction structure having first clad layer, an active layer and a second clad layer, successively formed on a semiconductor substrate. First and second electrodes are respectively formed on the first and second clad layers. ZnSSe thin films of low-resistivity are preferably used as the first and/or clad second layers, while a ZnSTe film can be used as the active layer. |
| 公开日期 | 1994-01-11 |
| 申请日期 | 1991-12-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47390]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI, LTD. |
| 推荐引用方式 GB/T 7714 | MIGITA, MASAHITO,TAIKE, AKIRA,SHIIKI, MASATOSHI. Semiconductor emitting device. US5278856. 1994-01-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。