GaN laser element
文献类型：专利
| 作者 | KAWAKAMI, TOSHIYUKI; ONO, TOMOKI; ITO, SHIGETOSHI; OMI, SUSUMU |
| 发表日期 | 2013-10-01 |
| 专利号 | US8548019 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | GaN laser element |
| 英文摘要 | In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction. |
| 公开日期 | 2013-10-01 |
| 申请日期 | 2012-04-03 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47392]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KAWAKAMI, TOSHIYUKI,ONO, TOMOKI,ITO, SHIGETOSHI,et al. GaN laser element. US8548019. 2013-10-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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