中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser device having plurality of layers for emitting lights of different wavelengths and method of driving the same

文献类型:专利

作者SHIMIZU, AKIRA; IKEDA, SOTOMITSU
发表日期1991-07-16
专利号US5033053
著作权人CANON KABUSHIKI KAISHA, MARUKO, A CORP. OF JAPAN
国家美国
文献子类授权发明
其他题名Semiconductor laser device having plurality of layers for emitting lights of different wavelengths and method of driving the same
英文摘要A semiconductor laser device capable of emitting lights of different wavelengths has a substrate, a first light-emitting layer provided on the substrate, and a second light-emitting layer provided on the substrate and having a greater band gap than the first light-emitting layer. A barrier layer is disposed between the first and second light-emitting layers. The barrier layer has a band gap greater than those of the first and second light-emitting layers. The band gap and the thickness of the barrier layer are determined to be large enough to create, in response to injection of carriers to the light-emitting layers, a state in which the carrier density in the second light-emitting layer is made higher while the carrier density in the first light-emitting layer is made lower than those which would be obtained when the barrier layer is omitted. The device further has a pair of cladding layers sandwiching therebetween the first light-emitting layer, the barrier layer and the second light-emitting layer, the cladding layers having smaller refractive index values than the first and second light-emitting layers. The device further has electrodes for supplying electrical currents to the first and second light-emitting layers.
公开日期1991-07-16
申请日期1990-03-27
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/47393]  
专题半导体激光器专利数据库
作者单位CANON KABUSHIKI KAISHA, MARUKO, A CORP. OF JAPAN
推荐引用方式
GB/T 7714
SHIMIZU, AKIRA,IKEDA, SOTOMITSU. Semiconductor laser device having plurality of layers for emitting lights of different wavelengths and method of driving the same. US5033053. 1991-07-16.

入库方式: OAI收割

来源:西安光学精密机械研究所

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