Semiconductor laser device having plurality of layers for emitting lights of different wavelengths and method of driving the same
文献类型:专利
作者 | SHIMIZU, AKIRA; IKEDA, SOTOMITSU |
发表日期 | 1991-07-16 |
专利号 | US5033053 |
著作权人 | CANON KABUSHIKI KAISHA, MARUKO, A CORP. OF JAPAN |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Semiconductor laser device having plurality of layers for emitting lights of different wavelengths and method of driving the same |
英文摘要 | A semiconductor laser device capable of emitting lights of different wavelengths has a substrate, a first light-emitting layer provided on the substrate, and a second light-emitting layer provided on the substrate and having a greater band gap than the first light-emitting layer. A barrier layer is disposed between the first and second light-emitting layers. The barrier layer has a band gap greater than those of the first and second light-emitting layers. The band gap and the thickness of the barrier layer are determined to be large enough to create, in response to injection of carriers to the light-emitting layers, a state in which the carrier density in the second light-emitting layer is made higher while the carrier density in the first light-emitting layer is made lower than those which would be obtained when the barrier layer is omitted. The device further has a pair of cladding layers sandwiching therebetween the first light-emitting layer, the barrier layer and the second light-emitting layer, the cladding layers having smaller refractive index values than the first and second light-emitting layers. The device further has electrodes for supplying electrical currents to the first and second light-emitting layers. |
公开日期 | 1991-07-16 |
申请日期 | 1990-03-27 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/47393] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | CANON KABUSHIKI KAISHA, MARUKO, A CORP. OF JAPAN |
推荐引用方式 GB/T 7714 | SHIMIZU, AKIRA,IKEDA, SOTOMITSU. Semiconductor laser device having plurality of layers for emitting lights of different wavelengths and method of driving the same. US5033053. 1991-07-16. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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