Method for making a field effect transistor integrated with an opto-electronic device
文献类型：专利
| 作者 | KINOSHITA, JUN'ICHI; SUZUKI, NOBUO; MORINAGA, MOTOYASU; HIRAYAMA, YUZO; NAKAMURA, MASARU |
| 发表日期 | 1991-06-04 |
| 专利号 | US5021361 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for making a field effect transistor integrated with an opto-electronic device |
| 英文摘要 | In a monolithic OEIC in which an FET and a light-emitting device are integrated, the light-emitting device has a first clad layer, an active layer, and a second clad layer stacked on a substrate, the FET has a channel layer and source and drain layers with a high impurity concentration stacked on the substrate, etching mask layers on the source and drain layers, and a gate electrode formed on a channel layer between source and drain electrodes and the source and drain layers, the first clad layer of the light-emitting diode and the source and drain layers with a high impurity concentration of the FET are formed of the same semiconductor layer, and an active layer of the light-emitting device and the etching mask layers of the FET are formed of the same semiconductor layer. |
| 公开日期 | 1991-06-04 |
| 申请日期 | 1989-12-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47399]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | KINOSHITA, JUN'ICHI,SUZUKI, NOBUO,MORINAGA, MOTOYASU,et al. Method for making a field effect transistor integrated with an opto-electronic device. US5021361. 1991-06-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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