Semiconductor laser device and a method for producing the same
文献类型：专利
| 作者 | MATSUMOTO, MITSUHIRO; SASAKI, KAZUAKI; KONDO, MASAKI; TAKEOKA, TADASHI; NAKATSU, HIROSHI; WATANABE, MASANORI; YAMAMOTO, OSAMU; YAMAMOTO, SABURO |
| 发表日期 | 1993-07-13 |
| 专利号 | US5228047 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and a method for producing the same |
| 英文摘要 | A semiconductor laser device is provided which is constituted by semiconductor materials so as to emit laser light from a cavity end facet, the laser light being excited in a waveguide within an active layer sandwiched between a pair of cladding layers, wherein a window layer made of a semiconductor material having a band gap greater than that of the active layer is formed on the cavity end facet from which the laser light is emitted, so as to have a thickness sufficient to prevent local generation of crystal defects by lattice mismatching between the semiconductor material of the window layer and the semiconductor materials at the cavity end facet. There is also provided a method for producing such a semiconductor laser device with high efficiency. |
| 公开日期 | 1993-07-13 |
| 申请日期 | 1991-09-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47403]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | MATSUMOTO, MITSUHIRO,SASAKI, KAZUAKI,KONDO, MASAKI,et al. Semiconductor laser device and a method for producing the same. US5228047. 1993-07-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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